IXTQ88N30P - IXYS

IXTQ88N30P PolarHT Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Co.

Features

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99129E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(on) Q gs Q gd RthJC RthCS RthCS IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, pulse test 45 60 S VGS = 0 V, VDS = 25 V, f = 1 MHz 6300 pF 950 pF 190 pF VGS .