TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on) 250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ.
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2015 IXYS CORPORATION, All Rights Reserved
DS99663G(11/15)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values Min. Typ. Max.
gfs
VDS = 10V, ID = 0.5
• ID25, Note 1
43
72
S
Ciss Coss Crss
VG.
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance :.
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1 | IXTQ74N20P |
IXYS |
Power MOSFET | |
2 | IXTQ74N20P |
INCHANGE |
N-Channel MOSFET | |
3 | IXTQ75N10P |
IXYS |
N-Channel MOSFET | |
4 | IXTQ75N10P |
INCHANGE |
N-Channel MOSFET | |
5 | IXTQ75N15 |
IXYS |
High Current Power MOSFET | |
6 | IXTQ100N25P |
IXYS Corporation |
N-Channel MOSFET | |
7 | IXTQ102N15T |
IXYS |
Power MOSFET | |
8 | IXTQ102N15T |
INCHANGE |
N-Channel MOSFET | |
9 | IXTQ102N20T |
IXYS |
Power MOSFET | |
10 | IXTQ102N20T |
INCHANGE |
N-Channel MOSFET | |
11 | IXTQ110N055P |
IXYS Corporation |
PolarHT Power MOSFET | |
12 | IXTQ110N055P |
INCHANGE |
N-ChannelMOSFET |