IXTP80N10T |
Part Number | IXTP80N10T |
Manufacturer | IXYS |
Description | TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VG... |
Features |
z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220
300 260 1.13 / 10 2.5 3.0
International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages
z z z
Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ± 20V, VDS = 0V VDS = 105V, VGS= 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 105 2.5 5.0 ± 200 5 150 V V... |
Document |
IXTP80N10T Data Sheet
PDF 202.10KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXTP80N10T |
INCHANGE |
N-Channel MOSFET | |
2 | IXTP80N12T2 |
IXYS |
Power MOSFET | |
3 | IXTP80N12T2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTP80N075L2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTP80N075L2 |
IXYS |
Power MOSFET |