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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pu.
S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier B Symbol Test Conditions O VDSS VGS = 0 V, ID = 250 µA Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 V Applications z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies VGS(th) VDS = VGS, ID = 4 mA 2.0 4V z DC choppers z.
IXTM75N10 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTM10N100 |
IXYS Corporation |
MOSFET |
|
| 2 | IXTM11N80 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTM11N80 |
IXYS |
Power MOSFET |
|
| 4 | IXTM12N100 |
IXYS Corporation |
MOSFET |
|
| 5 | IXTM12N90 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTM13N80 |
IXYS |
Power MOSFET |
|
| 7 | IXTM15N60 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTM20N60 |
IXYS |
N-Channel MOSFET |
|
| 9 | IXTM20N60 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXTM21N50 |
IXYS Corporation |
MOSFET |
|
| 11 | IXTM21N50 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTM24N45 |
IXYS |
(IXTMxxxx) MOS FETs |
|