www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC .
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 1.20 1.05 V V nA µA mA Ω Ω
Applications
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V VGS = 10 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTM12N90 |
INCHANGE |
N-Channel MOSFET | |
2 | IXTM10N100 |
IXYS Corporation |
MOSFET | |
3 | IXTM11N80 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTM11N80 |
IXYS |
Power MOSFET | |
5 | IXTM13N80 |
IXYS |
Power MOSFET | |
6 | IXTM15N60 |
INCHANGE |
N-Channel MOSFET | |
7 | IXTM20N60 |
IXYS |
N-Channel MOSFET | |
8 | IXTM20N60 |
INCHANGE |
N-Channel MOSFET | |
9 | IXTM21N50 |
IXYS Corporation |
MOSFET | |
10 | IXTM21N50 |
INCHANGE |
N-Channel MOSFET | |
11 | IXTM24N45 |
IXYS |
(IXTMxxxx) MOS FETs | |
12 | IXTM24N50 |
IXYS Corporation |
MOSFET |