·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperatur.
·Drain Current ID= 12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.9Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTM12N100 |
IXYS Corporation |
MOSFET | |
2 | IXTM10N100 |
IXYS Corporation |
MOSFET | |
3 | IXTM11N80 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTM11N80 |
IXYS |
Power MOSFET | |
5 | IXTM13N80 |
IXYS |
Power MOSFET | |
6 | IXTM15N60 |
INCHANGE |
N-Channel MOSFET | |
7 | IXTM20N60 |
IXYS |
N-Channel MOSFET | |
8 | IXTM20N60 |
INCHANGE |
N-Channel MOSFET | |
9 | IXTM21N50 |
IXYS Corporation |
MOSFET | |
10 | IXTM21N50 |
INCHANGE |
N-Channel MOSFET | |
11 | IXTM24N45 |
IXYS |
(IXTMxxxx) MOS FETs | |
12 | IXTM24N50 |
IXYS Corporation |
MOSFET |