MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 21N50 24N50 21N50 .
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.25 0.23 V V nA µA mA Ω Ω
Applications
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V VGS = 10 V.
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTM24N45 |
IXYS |
(IXTMxxxx) MOS FETs | |
2 | IXTM20N60 |
IXYS |
N-Channel MOSFET | |
3 | IXTM20N60 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTM21N50 |
IXYS Corporation |
MOSFET | |
5 | IXTM21N50 |
INCHANGE |
N-Channel MOSFET | |
6 | IXTM10N100 |
IXYS Corporation |
MOSFET | |
7 | IXTM11N80 |
INCHANGE |
N-Channel MOSFET | |
8 | IXTM11N80 |
IXYS |
Power MOSFET | |
9 | IXTM12N100 |
IXYS Corporation |
MOSFET | |
10 | IXTM12N90 |
INCHANGE |
N-Channel MOSFET | |
11 | IXTM13N80 |
IXYS |
Power MOSFET | |
12 | IXTM15N60 |
INCHANGE |
N-Channel MOSFET |