IXTH6N80A - IXYS

IXTH6N80A Power MOSFET

Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T.

Features

l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 91542E(5/96) 1-4 IXTH 6N80 IXTM 6N80 IXTH 6N80A .