Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Cu.
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99715 (11/06) Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V,.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characteri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH240N15X4 |
IXYS |
Power MOSFET | |
2 | IXTH24N45 |
IXYS |
(IXTHxxxx) MOS FETs | |
3 | IXTH24N50 |
IXYS Corporation |
MegaMOS FET | |
4 | IXTH24N50L |
IXYS Corporation |
Power MOSFET | |
5 | IXTH24N50L |
INCHANGE |
N-Channel MOSFET | |
6 | IXTH24N50Q |
INCHANGE |
N-Channel MOSFET | |
7 | IXTH24N65X2 |
IXYS |
Power MOSFET | |
8 | IXTH24P20 |
IXYS |
Standard Power MOSFET | |
9 | IXTH200N075T |
IXYS Corporation |
Power MOSFET | |
10 | IXTH200N075T |
INCHANGE |
N-Channel MOSFET | |
11 | IXTH200N085T |
IXYS Corporation |
Power MOSFET | |
12 | IXTH200N10T |
IXYS Corporation |
Power MOSFET |