X2-Class Power MOSFET Preliminary Technical Information IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 VDSS = ID25 = RDS(on) 650V 24A 145m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum .
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5
• ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
3.0 5.0 V
100 nA
5 A 100 μA
145 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circui.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH24N45 |
IXYS |
(IXTHxxxx) MOS FETs | |
2 | IXTH24N50 |
IXYS Corporation |
MegaMOS FET | |
3 | IXTH24N50L |
IXYS Corporation |
Power MOSFET | |
4 | IXTH24N50L |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH24N50Q |
INCHANGE |
N-Channel MOSFET | |
6 | IXTH240N055T |
IXYS Corporation |
Power MOSFET | |
7 | IXTH240N055T |
INCHANGE |
N-Channel MOSFET | |
8 | IXTH240N15X4 |
IXYS |
Power MOSFET | |
9 | IXTH24P20 |
IXYS |
Standard Power MOSFET | |
10 | IXTH200N075T |
IXYS Corporation |
Power MOSFET | |
11 | IXTH200N075T |
INCHANGE |
N-Channel MOSFET | |
12 | IXTH200N085T |
IXYS Corporation |
Power MOSFET |