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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) .
International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99654A(10/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
IXTH200N10T - INCHANGE
isc N-Channel MOSFET Transistor IXTH200N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH200N075T |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTH200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH200N085T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTH20N50D |
IXYS |
High Voltage MOSFET |
|
| 5 | IXTH20N60 |
IXYS |
N-Channel MOSFET |
|
| 6 | IXTH20N60 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTH20N65X |
IXYS |
Power MOSFET |
|
| 8 | IXTH20N65X |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTH21N50 |
IXYS Corporation |
MegaMOSFET |
|
| 10 | IXTH21N50 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTH220N055T |
IXYS Corporation |
Power MOSFET |
|
| 12 | IXTH220N055T |
INCHANGE |
N-Channel MOSFET |
|