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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(.
·Static drain-source on-resistance:
RDS(on) ≤ 14mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Speed Power Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
110
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
517
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-5.
IXTA110N12T2 - IXYS
TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on) 14m.
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|---|---|---|---|---|
| 1 | IXTA110N055P |
IXYS Corporation |
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| 2 | IXTA110N055P |
INCHANGE |
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| 3 | IXTA110N055T |
IXYS Corporation |
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| 4 | IXTA110N055T |
INCHANGE |
N-Channel MOSFET |
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| 5 | IXTA110N055T2 |
IXYS |
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| 6 | IXTA110N055T7 |
IXYS Corporation |
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IXYS |
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| 8 | IXTA100N04T2 |
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| 9 | IXTA100N15X4 |
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| 10 | IXTA102N15T |
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| 11 | IXTA102N15T |
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