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IXTA110N12T2 |
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| Part Number | IXTA110N12T2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 517 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -5... |
| Document |
 IXTA110N12T2 Data Sheet
PDF 250.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTA110N12T2 |
IXYS |
Power MOSFET |
|
| 2 | IXTA110N055P |
IXYS Corporation |
PolarHT Power MOSFET |
|
| 3 | IXTA110N055P |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTA110N055T |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTA110N055T |
INCHANGE |
N-Channel MOSFET |
|