IXTA10N60P - IXYS

IXTA10N60P Power MOSFET

PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C.

Features

z International Standard Packages z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Rectifier z Low QG z Low RDS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z Uninterrupted Power Supplies z AC Motor Drives z High Speed Power Switching Applications © 2010 IXYS CORPORATION, All Rights Reserved DS99330F(04/10) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss .