Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T C = 90°C TC = 25°C, 1 ms .
● International standard packages JEDEC TO-264 and PLUS247TM
● Low switching losses, low V(sat)
● MOS Gate turn-on
- drive simplicity
Symbol
Test Conditions
BVCES VGE(th) I
CES
IGES VCE(sat)
IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE
V =V CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
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Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
1200 2.5
V 5V
T= J
25°C
TJ = 125°C
250 µA 5 mA
±100 nA
TJ = 125°C
3.3 V 2.7 V
Applications
● AC motor speed control
● DC servo and robot drives
● DC choppers
● Uninterruptibl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGX35N120B |
IXYS |
IGBT | |
2 | IXGX35N120C |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGX35N120CD1 |
IXYS Corporation |
HiPerFAST IGBT | |
4 | IXGX320N60A3 |
IXYS |
600V IGBT | |
5 | IXGX32N170AH1 |
IXYS |
High-Voltage IGBT | |
6 | IXGX32N170H1 |
IXYS |
High Voltage IGBT | |
7 | IXGX120N120A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
8 | IXGX120N60A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
9 | IXGX120N60B |
IXYS Corporation |
(IXGX120N60B / IXGK120N60B) HiPerFAST IGBT | |
10 | IXGX120N60C2 |
IXYS |
IGBT | |
11 | IXGX120NC60C2 |
IXYS |
HiPerFAST IGBT Lightspeed 2 Series | |
12 | IXGX28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode |