www.DataSheet4U.com Advanced Technical Information HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25 °C to 150 °C TJ = 25 °C to 150 °C; RGS = 1 MW Continuous Transient TC = 25 °C TC = 90 °C External lead.
G = Gate C = Collector
C
E
(TAB)
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-55 ... +150 150 -55 ... +150 300 0.4/6
E = Emitter hee TAB = Collector DataS
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
• International standard packages
• Very high current, fast switching IGBT
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Symbol
Test Conditions
Characteristic Values (TJ =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGX120N60A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
2 | IXGX120N60C2 |
IXYS |
IGBT | |
3 | IXGX120N120A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
4 | IXGX120NC60C2 |
IXYS |
HiPerFAST IGBT Lightspeed 2 Series | |
5 | IXGX28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode | |
6 | IXGX320N60A3 |
IXYS |
600V IGBT | |
7 | IXGX32N170AH1 |
IXYS |
High-Voltage IGBT | |
8 | IXGX32N170H1 |
IXYS |
High Voltage IGBT | |
9 | IXGX35N120B |
IXYS |
IGBT | |
10 | IXGX35N120BD1 |
IXYS |
IGBT | |
11 | IXGX35N120C |
IXYS Corporation |
HiPerFAST IGBT | |
12 | IXGX35N120CD1 |
IXYS Corporation |
HiPerFAST IGBT |