IXGX35N120B - IXYS

IXGX35N120B IGBT

Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T C = 90°C TC = 25°C, 1 ms .

Features

● International standard packages JEDEC TO-264 and PLUS247TM
● Low switching losses, low V(sat)
● MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 V 5V T= J 25°C TJ = 125°C 250 µA 5 mA ±100 nA TJ = 125°C 3.3 V 2.7 V Applications
● AC motor speed control
● DC servo and robot drives
● DC choppers
● Uninterruptibl.