IXGP2N100A - IXYS

IXGP2N100A High Voltage IGBT

High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load PC TJ TJM TSTG Weigh.

Features

• International standard package • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity Applications • Capacitor discharge • Anode triggering of thyristors • DC choppers • Switched-mode and resonant-mode power supplies. © 2000 IXYS All rights reserved 95514C (9/00) IXGP 2N100 IXGP 2N100A Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2 % Characteristic Values Min. Typ. Max. 0.7 1.5 S Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz 1.