High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω .
z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20N120B 20N120BD1 2.5 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGP20N120 |
IXYS Corporation |
IGBT | |
2 | IXGP20N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
3 | IXGP20N120B3 |
IXYS Corporation |
GenX3 1200V IGBT | |
4 | IXGP20N120BD1 |
IXYS |
High Voltage IGBT | |
5 | IXGP20N100 |
IXYS Corporation |
IGBT | |
6 | IXGP20N60B |
IXYS Corporation |
HiPerFASTTM IGBT | |
7 | IXGP24N120C3 |
IXYS Corporation |
GenX3 1200V IGBT | |
8 | IXGP24N60C |
IXYS Corporation |
HiPerFAST IGBT Lightspeed Series | |
9 | IXGP2N100 |
IXYS |
High Voltage IGBT | |
10 | IXGP2N100A |
IXYS |
High Voltage IGBT | |
11 | IXGP10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGP10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT |