IXGP20N120B3 - IXYS Corporation

IXGP20N120B3 GenX3 1200V IGBT

Preliminary Technical Information GenX3TM 1200V IGBT IXGA20N120B3 IXGP20N120B3 VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1.

Features

z Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220 z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 ±100 TJ = 125°C 2.7 2.8 3.1 V V μA mA nA V V Applications z z z z z z z VCE = VCES,VGE = 0V VCE = 0V, VGE = ±20V IC = 16A, VGE = 15V, N.