GenX3TM 300V IGBTs IXGK400N30A3 IXGX400N30A3 Ultra-Low Vsat PT IGBTs for up to 10kHz Switching VCES = 300V IC25 = 400A VCE(sat) ≤ 1.15V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capab.
z z z E = Emitter Tab = Collector Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque ( IXGK ) Mounting Force ( IXGX ) TO-264 PLUS247 300 260 1.13/10 20..120/4.5..27 10 6 Optimized for Low Conduction Losses High Avalanche Capability International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1mA, VGE = 0V = 4mA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 100A, VGE = 15V, Note 1 = 400A Characteristic Values Min. Typ. Max. 300 3.0 5.0 V V High Power Den.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGK120N120A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
2 | IXGK120N60A3 |
IXYS |
Ultra-Low Vsat PT IGBT | |
3 | IXGK120N60B |
IXYS Corporation |
(IXGX120N60B / IXGK120N60B) HiPerFAST IGBT | |
4 | IXGK120N60C2 |
IXYS |
IGBT | |
5 | IXGK28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode | |
6 | IXGK320N60A3 |
IXYS |
600V IGBT | |
7 | IXGK35N120B |
IXYS |
IGBT | |
8 | IXGK35N120BD1 |
IXYS |
IGBT | |
9 | IXGK35N120C |
IXYS Corporation |
HiPerFAST IGBT | |
10 | IXGK35N120CD1 |
IXYS Corporation |
HiPerFAST IGBT | |
11 | IXGK50N50BU1 |
IXYS Corporation |
HiPerFAST IGBT | |
12 | IXGK50N60A2D1 |
IXYS Corporation |
IGBT |