Preliminary data HiP erF AST HiPerF erFAST with Diode Combi P ac k Pac ack TM IGBT IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S VCES IC(25) VCE(sat)typ tfi(typ) TO-247 SMD* = 500 V = 44 A = 2.1 V = 55 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC.
• International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD
• High frequency IGBT and antiparallel FRED in one package
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on - drive simplicity Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers Advantages
• Space savings (two devices in one package)
• High power density
• Suitable for surface mounting
• Very low switching losses for high frequency applications
• Easy to mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH22N50BU1S |
IXYS Corporation |
HiPerFAST IGBT | |
2 | IXGH22N50B |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGH22N50BS |
IXYS Corporation |
HiPerFAST IGBT | |
4 | IXGH20N100 |
IXYS |
IGBT | |
5 | IXGH20N120 |
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT | |
6 | IXGH20N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
7 | IXGH20N120B |
IXYS |
High Voltage IGBT | |
8 | IXGH20N140C3H1 |
IXYS |
GenX3 1400V IGBTs | |
9 | IXGH20N30 |
IXYS Corporation |
HiPerFAST IGBT | |
10 | IXGH20N60 |
IXYS Corporation |
IGBT | |
11 | IXGH20N60A |
IXYS Corporation |
IGBT | |
12 | IXGH20N60B |
IXYS Corporation |
IGBT |