IXFV26N60P - IXYS Corporation

IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ .

Features

z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved IXFV 26N60P Symbol Test Conditions IXFH 26N60P IXFQ 26N60P IXFV 26N60PS www.DataSheet4U.com IXFT 26N60P Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 4150 S pF pF pF ns ns ns ns nC nC nC 0.27 K/W K/W gfs Ciss Coss Crss td.