IXFV26N50P - IXYS Corporation

IXFV26N50P Avalanche Rated Fast Instrinsic Diode

PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 2.

Features

z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99276A(09/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 370 57 20 VGS = 10 V, VDS = 0.5 ID25 RG = 4 Ω (External) 25 58 20 60 VGS = 10 V, VDS = 0.5 VDSS, ID = .