PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; R.
D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS995.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFV20N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
2 | IXFV22N50P |
IXYS |
PolarHV HiPerFET Power MOSFET | |
3 | IXFV22N50PS |
IXYS |
PolarHV HiPerFET Power MOSFET | |
4 | IXFV22N60P |
IXYS |
Power MOSFETs | |
5 | IXFV22N60PS |
IXYS |
Power MOSFETs | |
6 | IXFV26N50P |
IXYS Corporation |
Avalanche Rated Fast Instrinsic Diode | |
7 | IXFV26N50PS |
IXYS Corporation |
Avalanche Rated Fast Instrinsic Diode | |
8 | IXFV26N60P |
IXYS Corporation |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | |
9 | IXFV26N60PS |
IXYS Corporation |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | |
10 | IXFV110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
11 | IXFV110N10PS |
IXYS |
PolarHT HiPerFET Power MOSFET | |
12 | IXFV110N25T |
IXYS Corporation |
Trench Gate Power HiperFET |