IXFT4N100Q - IXYS

IXFT4N100Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 2.

Features

• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1.5 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages
• Easy to mount
• Space savings
• High power.