IXFT44N50P - IXYS

IXFT44N50P Power MOSFET

PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT44N50P IXFH44N50P IXFK44N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25.

Features

 International Standard Packages
 Fast Intrinsic Rectifier
 Avalanche Rated
 Low RDS(ON) and QG
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 Laser Drivers
 AC and DC Motor Drives
 Robotics and Servo Controls © 2014 IXYS CORPORATION, All Rights Reserved DS99366F(04/14) IXFT44N50P IXFH44N50P IXFK44N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr.