IXFT40N30Q - ETC

IXFT40N30Q HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 40N30Q IXFT 40N30Q VDSS ID25 RDS(on) trr = 300 V = 40 A = 80 mW £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuou.

Features

• IXYS advanced low Qg process
• International standard packages
• Low gate charge and capacitance - easier to drive - faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.0 4 ±100 25 1 80 V V nA mA mA mW Advantages
• Easy to mount
• Space savings
• High power densit.