IXFT36N50P - IXYS

IXFT36N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS(on) = 500 V = 36 A = 170 mΩ www.DataSheet4U.com TO-247 AD (IXFH) (TAB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ =.

Features

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 4 mA VDS = VGS, ID = 250μA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±100 25 250 V V nA μA μA z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 170 mΩ Easy to mount Space savings High power density DS99364D(10/05) © 2005 IXYS All rights reserved IXFH.