IXFT32N100XHV - IXYS

IXFT32N100XHV Power MOSFET

Preliminary Technical Information X-Class HiPerFETTM Power MOSFET IXFT32N100XHV IXFH32N100X IXFK32N100X VDSS = ID25 = RDS(on) 1000V 32A 220m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transien.

Features

 International Standard Packages
 Low RDS(ON) and QG
 Avalanche Rated
 Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5
• ID25, Note 1 ©2019 IXYS CORPORATION, All Rights Reserved. Characteristic Values Min. Typ. Max. 1000 V 3.5 6.0 V 100 nA 50 A 3 mA 220 m Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Po.