IXFT30N50Q3 - IXYS Corporation

IXFT30N50Q3 Power MOSFET

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT30N50Q3 IXFH30N50Q3 VDSS ID25 RDS(on) = 500V = 30A ≤ 200mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt .

Features

Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.5 6.5 ±100 V V nA z High Power Density Easy to Mount Space Savings Applications z z z 10 μA.