IXFT28N50F - IXYS Corporation

IXFT28N50F HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A = 190mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net T.

Features

l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 4.0 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS =.