HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous.
l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 24N50Q 26N50Q 25 1 0.23 0.20 V V nA µA mA Ω Ω Unclamped Inductive Switching (UIS) rated l Fast switching l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Note 2 Molding epoxies meet UL 94 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFT24N50 |
IXYS Corporation |
Power MOSFET | |
2 | IXFT24N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
3 | IXFT24N90P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
4 | IXFT20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFT20N60Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
6 | IXFT20N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
7 | IXFT20N80Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class | |
8 | IXFT21N50F |
IXYS Corporation |
HiPerRF Power MOSFETs | |
9 | IXFT21N50Q |
IXYS |
Power MOSFET | |
10 | IXFT22N60P |
IXYS |
PolarHV HiPerFET Power MOSFETs | |
11 | IXFT23N60Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
12 | IXFT23N80Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class |