IXFT23N80Q - IXYS Corporation

IXFT23N80Q HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transie.

Features

z z z 1.13/10 Nm/lb.in. z 20...120/4.5...27 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA µA mA Ω z Easy to mount Space savings High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 3 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS .