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IXFT23N80Q |
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| Part Number | IXFT23N80Q |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.6 mm (0.063 in) fr... |
| Features |
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1.13/10 Nm/lb.in.
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20...120/4.5...27 N/lb 6 4 g g
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IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier
Advantages
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA µA mA Ω
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Easy to mount Space savings High power density
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 3 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS ... |
| Document |
 IXFT23N80Q Data Sheet
PDF 598.85KB |
| Distributor | Stock | Price | Buy |
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