Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150.
W °C °C °C °C °C N/lb V~ g g z z z International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force 50/60 Hz, RMS, 1 minute TO-264 PLUS247 300 260 20..120/4.5..25 2500 10 6 z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR80N15Q |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 2 | IXFR80N20Q |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 3 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 4 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |
|
| 5 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 6 | IXFR10N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 7 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
|
| 8 | IXFR120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 9 | IXFR12N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 10 | IXFR12N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 11 | IXFR140N20P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 12 | IXFR14N100Q2 |
IXYS |
HiPerFET Power MOSFET |
|