IXFR50N50 - IXYS Corporation

IXFR50N50 Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 A trr ≤ 250 ns RDS(on) 100 mΩ 90 mΩ Symbol VDSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Maximum Ratings TJ = 25°C t.

Features

l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<50pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly l Space savings l High power density © 2002 IXYS All rights reserved 98588B (04/02) Symbol gfs C iss Coss C rss t d(on) tr td(o.