Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ .
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery intrinsic diode Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150°C TJ =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFR20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
2 | IXFR20N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
3 | IXFR20N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
4 | IXFR21N100Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs | |
5 | IXFR24N100 |
IXYS Corporation |
HiPerFETTM Power MOSFETs | |
6 | IXFR24N50 |
IXYS Corporation |
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs | |
7 | IXFR24N50Q |
IXYS Corporation |
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs | |
8 | IXFR26N50 |
IXYS Corporation |
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs | |
9 | IXFR26N50Q |
IXYS Corporation |
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs | |
10 | IXFR26N60Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs | |
11 | IXFR27N80Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-CLASS | |
12 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |