IXFR200N10P IXYS Corporation PolarTM HiPerFET Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IXFR200N10P

IXYS Corporation
IXFR200N10P
IXFR200N10P IXFR200N10P
zoom Click to view a larger image
Part Number IXFR200N10P
Manufacturer IXYS Corporation
Description Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avava...
Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery intrinsic diode Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150°C TJ =...

Document Datasheet IXFR200N10P Data Sheet
PDF 593.20KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXFR20N100P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
2 IXFR20N120P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
3 IXFR20N80P
IXYS Corporation
PolarHV HiPerFET Power MOSFET Datasheet
4 IXFR21N100Q
IXYS Corporation
HiPerFETTM Power MOSFETs Datasheet
5 IXFR24N100
IXYS Corporation
HiPerFETTM Power MOSFETs Datasheet
More datasheet from IXYS Corporation



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact