IXFR200N10P |
Part Number | IXFR200N10P |
Manufacturer | IXYS Corporation |
Description | Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avava... |
Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z
Fast recovery intrinsic diode
Applications z DC-DC converters
z z z z
Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
50/60 Hz, RMS, 1 minute Mounting Force
2500 20..120/4.6..20 5
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150°C TJ =... |
Document |
IXFR200N10P Data Sheet
PDF 593.20KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXFR20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
2 | IXFR20N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
3 | IXFR20N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
4 | IXFR21N100Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs | |
5 | IXFR24N100 |
IXYS Corporation |
HiPerFETTM Power MOSFETs |