IXFR27N80Q - IXYS Corporation

IXFR27N80Q HiPerFET Power MOSFETs Q-CLASS

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr £ 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G (TAB) D Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to.

Features

• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls Advantages
• PLUS 247TM package for clip or spring mounting
• Space savings
• High power density 98722 (05/22/00) Symbol Test Conditions Characteristic Valu.