www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W trr = 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC =.
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays Advantages
• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
• Space savings
• High power density
91527F(7/97)
Symbol
Test Condi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFM75N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFM10N100 |
IXYS Corporation |
Power MOSFET | |
3 | IXFM10N90 |
ETC |
HiPerFET Power MOSFETs | |
4 | IXFM10N90 |
IXYS |
Power MOSFETs | |
5 | IXFM11N80 |
IXYS Corporation |
Power MOSFET | |
6 | IXFM12N100 |
IXYS Corporation |
Power MOSFET | |
7 | IXFM12N90 |
ETC |
HiPerFET Power MOSFETs | |
8 | IXFM12N90 |
IXYS |
Power MOSFETs | |
9 | IXFM13N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFM13N80 |
IXYS Corporation |
Power MOSFET | |
11 | IXFM13N90 |
ETC |
HiPerFET Power MOSFETs | |
12 | IXFM15N60 |
IXYS Corporation |
(IXFxxxN60) HiPerFET Power MOSFETs |