HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 V DSS IR D25 DS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr £ 250 ns Maximum Ratings TO-247 AD (IXFH) V DSS VDGR VGS VGSM ID25 I.
q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS)
rated q Low package inductance
- easy to drive and to protect q Fast intrinsic Rectifier
Symbol
V DSS
VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V = 0 V, I = 3 mA
GS
D
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8
• VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5
• ID25
10N100 12N100
13N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1000 2.0
V 4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFM12N90 |
ETC |
HiPerFET Power MOSFETs | |
2 | IXFM12N90 |
IXYS |
Power MOSFETs | |
3 | IXFM10N100 |
IXYS Corporation |
Power MOSFET | |
4 | IXFM10N90 |
ETC |
HiPerFET Power MOSFETs | |
5 | IXFM10N90 |
IXYS |
Power MOSFETs | |
6 | IXFM11N80 |
IXYS Corporation |
Power MOSFET | |
7 | IXFM13N50 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
8 | IXFM13N80 |
IXYS Corporation |
Power MOSFET | |
9 | IXFM13N90 |
ETC |
HiPerFET Power MOSFETs | |
10 | IXFM15N60 |
IXYS Corporation |
(IXFxxxN60) HiPerFET Power MOSFETs | |
11 | IXFM20N60 |
IXYS Corporation |
Power MOSFET | |
12 | IXFM20N60 |
INCHANGE |
N-Channel MOSFET |