IXFM15N60 - IXYS Corporation

IXFM15N60 (IXFxxxN60) HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A 20 A RDS(on) 0.50 W 0.35 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW C.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays Advantages
• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
• Space savings
• High power density 91526E (4/99) Symbol Test Cond.