Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Ts.
l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 3 mA 0.39 Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 DC-DC converters.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK24N100Q3 |
IXYS |
Power MOSFET | |
2 | IXFK24N120Q2 |
IXYS |
HiPerFET Power MOSFET | |
3 | IXFK24N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
4 | IXFK24N90Q |
IXYS |
HiPerFET Power MOSFET | |
5 | IXFK240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
6 | IXFK240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
7 | IXFK200N10P |
IXYS |
Polar HiPerFET Power MOSFET | |
8 | IXFK20N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
9 | IXFK20N120P |
IXYS Corporation |
Power MOSFET | |
10 | IXFK20N80Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class | |
11 | IXFK210N17T |
IXYS |
GigaMOS Power MOSFET | |
12 | IXFK210N17T |
IXYS |
GigaMOS Power MOSFET |