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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17T IXFX210N17T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 210A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 1.
z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 170 2.5 5.0 ± 200 V V nA z Easy to Mount S.
IXFK210N17T - IXYS
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFK21N100F |
IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
|
| 2 | IXFK21N100Q |
IXYS |
HiPerFET Power MOSFET |
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| 3 | IXFK200N10P |
IXYS |
Polar HiPerFET Power MOSFET |
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| 4 | IXFK20N120 |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 5 | IXFK20N120P |
IXYS Corporation |
Power MOSFET |
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| 6 | IXFK20N80Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class |
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| 7 | IXFK220N15P |
IXYS Corporation |
Polar Power MOSFET HiperFET |
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| 8 | IXFK220N17T2 |
IXYS Corporation |
GigaMOS TrenchT2 HiperFET Power MOSFET |
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| 9 | IXFK230N20T |
IXYS |
GigaMOS Power MOSFET |
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| 10 | IXFK230N20T |
IXYS |
GigaMOS Power MOSFET |
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| 11 | IXFK240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET |
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| 12 | IXFK240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET |
|