Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous .
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W
• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier Advantages
• Easy to mount
• Space savings
• High power density
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5
• ID25 Pulse test, t £ 300 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK20N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFK20N120P |
IXYS Corporation |
Power MOSFET | |
3 | IXFK200N10P |
IXYS |
Polar HiPerFET Power MOSFET | |
4 | IXFK210N17T |
IXYS |
GigaMOS Power MOSFET | |
5 | IXFK210N17T |
IXYS |
GigaMOS Power MOSFET | |
6 | IXFK21N100F |
IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
7 | IXFK21N100Q |
IXYS |
HiPerFET Power MOSFET | |
8 | IXFK220N15P |
IXYS Corporation |
Polar Power MOSFET HiperFET | |
9 | IXFK220N17T2 |
IXYS Corporation |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
10 | IXFK230N20T |
IXYS |
GigaMOS Power MOSFET | |
11 | IXFK230N20T |
IXYS |
GigaMOS Power MOSFET | |
12 | IXFK240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET |