IXFK21N100Q - IXYS

IXFK21N100Q HiPerFET Power MOSFET

www.DataSheet4U.com HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG.

Features

• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls Advantages
• PLUS 247TM package for clip or spring mounting
• Space savings
• High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, un.