X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT50N60X IXFQ50N60X IXFH50N60X VDSS = ID25 = RDS(on) 600V 50A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 1.
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100657A(5/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5
• ID25, Note 1
RGi Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy related Time related
VGS = 0V VDS = 0.8.
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH50N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFET | |
2 | IXFH50N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFH50N30Q3 |
IXYS |
Power MOSFET | |
4 | IXFH50N85X |
IXYS |
Power MOSFET | |
5 | IXFH52N30P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
6 | IXFH52N30Q |
IXYS Corporation |
Power MOSFET | |
7 | IXFH52N50P2 |
IXYS Corporation |
PolarP2 HiperFET Power MOSFET | |
8 | IXFH56N30X3 |
INCHANGE |
N-Channel MOSFET | |
9 | IXFH56N30X3 |
IXYS |
Power MOSFET | |
10 | IXFH58N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
11 | IXFH58N20Q |
IXYS Corporation |
HiPerFET Power MOSFETs | |
12 | IXFH5N100 |
IXYS Corporation |
Power MOSFET |