IXFH50N60X |
Part Number | IXFH50N60X |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤73mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-L... |
Features |
·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤73mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Plused 120 A PD Total Dissipation @TC=25℃ 660 W Tj Max. Operating Junction Temperature -55~... |
Document |
IXFH50N60X Data Sheet
PDF 332.96KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXFH50N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFET | |
2 | IXFH50N60X |
IXYS |
Power MOSFET | |
3 | IXFH50N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFH50N30Q3 |
IXYS |
Power MOSFET | |
5 | IXFH50N85X |
IXYS |
Power MOSFET |