Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS ID25 RDS(on) = 600V = 50A ≤ 145mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test.
z z z z G D S D (Tab) TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 300 260 1.13 / 10 4.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z z .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH50N60X |
IXYS |
Power MOSFET | |
2 | IXFH50N60X |
INCHANGE |
N-Channel MOSFET | |
3 | IXFH50N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFH50N30Q3 |
IXYS |
Power MOSFET | |
5 | IXFH50N85X |
IXYS |
Power MOSFET | |
6 | IXFH52N30P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
7 | IXFH52N30Q |
IXYS Corporation |
Power MOSFET | |
8 | IXFH52N50P2 |
IXYS Corporation |
PolarP2 HiperFET Power MOSFET | |
9 | IXFH56N30X3 |
INCHANGE |
N-Channel MOSFET | |
10 | IXFH56N30X3 |
IXYS |
Power MOSFET | |
11 | IXFH58N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
12 | IXFH58N20Q |
IXYS Corporation |
HiPerFET Power MOSFETs |